Semiconductor Devices

  • Pablo Bianucci, Concordia University, Canada
    Patterned growth of ZnO nanowires
  • Jenn-Gwo Hwu, National Taiwan University, Taiwan
    Photo Sensitivity Enhancement through Oxide Voltage Drop Modulation Mechanism in MOS Tunneling Diode
  • Takafumi Kamimura, National Institute of Information and Communications Technology (NICT), Japan
    Band alignment of Au/Al2O3/Ga2O3 MOS structure determined by XPS and tunneling current analysis
  • Chyuan Haur Kao, Chang Gung University, Taiwan
    High Dielectric Constant (K) Materials for Bio-Sensor Application
  • Soon-Yong Kwon, Ulsan National Institute of Science and Technology (UNIST),Korea
    III-N LEDs with graphene double-sided active layers
  • Olivier Latry, Université de Rouen, France
    Ageing of GaN HEMT devices: which degradation indicators?
  • Jiangwei Liu, National Institute for Materials Science (NIMS),Japan
    Hydrogenated-diamond Logic Inverter
  • Tokuei Sako, Nihon University, Japan
    Laser induced ultrafast transient current in quasi-one-dimensional nanowires
  • Lionel Vayssieres, Xian Jiaotong University, China
    Confinement effects in large bandgap oxide semiconductors
  • Shijie Wang, Institute of Materials Research and Engineering (IMRE), A*STAR, Singapore
    The integration of oxide with 2D MoS2 materials
  • Xingjun Wang, Peking University, China
    Ultrashort and Low-loss Si based multiplexing devices
  • Kaiyou Wang, Institute of Semiconductors, CAS, China
    The photodetectors based on layered (III,Se) and their heterostructures
  • Kaikai Xu, University of Electronic Science and Technology of China, China
    Silicon avalanche based light emitting diodes and their potential integration into CMOS and RF integrated circuit technology
  • Atsushi A. Yamaguchi, Kanazawa Institute of Technology, Japan
    Optical Polarization Properties in Nonpolar InGaN Quantum Wells
  • HongYu Yu, South University of Science and Technology of China, China
    CMOS process compatible GaN HV HEMT devices
  • Ka-Di Zhu, Shanghai Jiao Tong University, China
    Optical mass sensing with hybrid quantum nanomechanical systems.

 

 

 

 

 

 

Workshop Chair:

  • Jenn-Gwo Hwu, National Taiwan University, Taiwan
  • Kaikai Xu, University of Electronic Science and Technology of China, China
Operating Organization

OAHOST
Sponsors
ISCAS
UESTC
University of Electronic Science and Technology of China
INRS
UARK

Springer